首页> 外文OA文献 >Virtually Bare Nanocrystal Surfaces - Significantly Enhanced Electrical Transport in CuInSe2 and CuIn(1-x)Ga(x)Se2 Thin Films upon Ligand Exchange with Thermally Degradable 1-Ethyl-5-thiotetrazole
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Virtually Bare Nanocrystal Surfaces - Significantly Enhanced Electrical Transport in CuInSe2 and CuIn(1-x)Ga(x)Se2 Thin Films upon Ligand Exchange with Thermally Degradable 1-Ethyl-5-thiotetrazole

机译:几乎裸露的纳米晶体表面 - 显着增强电学   在配体交换时在CuInse2和CuIn(1-x)Ga(x)se2薄膜中的传输   可热降解的1-乙基-5-硫代四唑

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摘要

We present a facile and safe ligand exchange method for readily synthesizedCuInSe2 (CIS) and CuIn(1-x)Ga(x)Se2 (CIGS) nanocrystals (NCs) from oleylamineto 1-ethyl-5-thiotetrazole which preserves the colloidal stability of thechalcopyrite structure. 1-ethyl-5-thiotetrazole as thermally degradable ligandis adapted for the first time for trigonal pyramidal CIS NCs (18 nm), elongatedCIS NCs (9 nm) and CIGS NCs (6 nm). The exchanged NC solutions are spin-coatedonto Si/SiO2 substrates with predefined gold electrodes to yield ordered NCthin films. These films are thermally annealed at 260 C to completely remove1-ethyl-5-thiotetrazol leaving virtually bare NC surfaces. We measure thecurrent-voltage characteristics of the NC solids prior to ligand thermolysis inthe dark and under illumination and after thermolysis of the ligand in the samemanner. The conductivity of trigonal pyramidal CIS NCs increases by four ordersof magnitude from 1.4*10E-9 S/cm in the dark to 1.4*10E-5 S/cm for ligand-freeilluminated NC films. Elongated CIS NC films show an increase by three ordersof magnitude and CIGS NC films exhibit improved conductivity by two orders ofmagnitude. The degree of conductivity enhancement thereby depends on the NCsize accentuating the role of trap-states and internal grain boundaries inligand-free NC solids for electrical transport. Our approach offers for thefirst time the possibility to address chalcopyrite materials' electricalproperties in a virtually ligand-free state.
机译:我们提出了一种容易和安全的配体交换方法,用于从油胺到1-乙基-5-硫代四唑的容易合成的CuInSe2(CIS)和CuIn(1-x)Ga(x)Se2(CIGS)纳米晶体(NCs)保留了黄铜矿的胶体稳定性结构体。 1-乙基-5-硫代四唑作为可热降解的配体首次适用于三角锥体CIS NCs(18 nm),细长的CIS NCs(9 nm)和CIGS NCs(6 nm)。交换的NC溶液被旋涂到具有预定金电极的Si / SiO2基板上,以产生有序的NCthin薄膜。这些薄膜在260°C的温度下进行热退火,以完全去除1-乙基-5-硫代四唑,几乎没有NC表面。我们在暗处和光照下配体热解之前以及配体以相同方式热解之后,测量NC固体的电流-电压特性。三角形金字塔形CIS NC的电导率从暗处的1.4 * 10E-9 S / cm增加到四个无配体照明NC膜的1.4 * 10E-5 S / cm,增加了四个数量级。伸长的CIS NC薄膜显示增加了三个数量级,而CIGS NC薄膜的导电率提高了两个数量级。因此,电导率增强的程度取决于NCsize的大小,该大小强调了陷阱态和内部晶界无配体NC固体在电传输中的作用。我们的方法首次为解决几乎没有配体状态的黄铜矿材料的电性能提供了可能性。

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